अमूर्त

Effect of Carbon Content onto Silicon-Carbon Alloys Properties Elaborated For The Passivation of Monocrystalline Solar Cell

Salwa Merazga*, Aissa Keffous, Abdelhak Cheriet, Khadidja Khaldi, Michel Rosso, Mohamed Kechouane and Noureddine Gabouze

 A hydrogenated amorphous silicon carbon alloys thin films have been grown at low power regime via plasma enhanced chemical vapour deposition process (PECVD) with decomposition of silane (SiH4) and methane (CH4) at varying carbon content (x). The carbon content is restricted to the range 0<x<0.3. The structural properties of the thin films were investigated using infrared spectroscopy (FTIR), secondary ion mass spectrometry (SIMS), scanning electronic microscopy with elementa